Thank you, Faye, and thanks everyone for joining us on the call today. Before I discuss our results, I would like to take a moment to welcome Bill Cooper to Everspin as our Chief Financial Officer. Bill joined Everspin in early January coming from Advanced Micro Devices where he held various executive finance positions. On behalf of the board and management team, I also would like to thank Matt Tenorio for stepping back in over the past several months as our Interim Chief Financial Officer. Turning to our fourth quarter results, we are pleased to report our fourth quarter results with revenue of $13.2 million above our expectations and EPS of $0.05 at the high end of our guidance range. Our outperformance this quarter was due to strengths in product revenue, which came in higher than expected, plus some additional uplift from our ongoing RadHard projects. During the quarter, Everspin continued to make progress on a number of wins and advancements that we outlined in prior quarters. Most notably, we saw strong momentum in our RadHard deals. For example, we signed a contract with Purdue University to advance artificial intelligence hardware through the Microelectronic Commons program administered by the Silicon Crossroads Microelectronic Commons, or SCMC hub. We also executed the next phase of the project with QuickLogic to develop a strategic Radiation-Hard, Field-Programmable Gate Array, or FPGA. Our 4-megabit to 128-megabit STT-MRAM persist family is now validated for configuration across all Lattice Semiconductor FPGAs. Enabled through the lattice-radiant software suite, this validation highlights MRAM's role as a robust and reliable configuration memory device for a wide range of applications in industries such as industrial, aerospace, military, and automotive. When we designed the latest high-density persist MRAM including NOR interface support, we anticipated the need for frequent, fast, and reliable FPGA configuration. With multiple design engagements already underway, this partnership showcases how our MRAM solutions deliver the performance and reliability required across diverse applications. The shift from traditional flash memory to MRAM in FPGA configuration reflects the growing demands of modern applications. These key advancements demonstrate the strength of a product portfolio and technology. On the product side, we had a total of 178 design wins in 2024. Our pipeline of new design wins for our MRAM products remains strong and reflects the high quality of our products which have continued to generate interest and win designs despite the pressure on customer R&D budgets in 2024. We are also seeing continued interest in our toggle MRAM and the 4-megabit to 128-megabit xSPI STT-MRAM product family. We expect our design wins with the newer MRAM customers to convert to production later in 2025, post-qualification of our industrial STT-MRAM products. Turning to our results, I will start by discussing products for which we recognize revenue in the quarter before discussing new wins and other projects with future revenue potential. During the fourth quarter, we continued to ramp revenue from the sale of a persist 1-gigabit STT-MRAM into IBM's Flash Core Module 4 or FCM 4 for data center applications. As a reminder, this is a fourth generation of IBM's FCM that has featured our 1-gigabit STT-MRAM solution. Our PERSYST solution delivers 2.7 gigabytes per second of both read and write bandwidth, coupled with non-volatility with a DDR4-like interface. We are pleased with our progress and anticipate a continued uplift in our product revenue from this ongoing project. We are pleased to have recognized initial revenue from the PERSYST MRAM prototypes we shipped to Lucid Motors for their Gravity SUV. Looking ahead, we expect to continue recognizing revenue from this project over the next two years, depending upon the customer reception of the SUV in the marketplace. While the total market is small due to the low number of Lucid SUVs in the market, we believe the design win is a clear demonstration of the reliability and performance that our MRAM products deliver in demanding environments. We are seeing good traction with the PERSYST 4-megabit to 128-megabit STT-MRAM product family in multiple sectors across geographies. For example, our design wins in Asia Pacific are in the network and casino gaming industry. In EMEA, the design wins include aerospace, industrial automation, and automotive transportation industry. In the Americas, our design wins are focused on aerospace, oil and gas, industrial automation, and FPGA applications. Turning to our licensing royalty, patent, and other revenue, we continue to recognize revenue from the $9.25 million Frontgrade technologies project that was announced in August of last year to develop a custom radiation hardened STT-MRAM macro for embedded solutions using our persist STT-MRAM technology. As a reminder, the deal will support current and future DOD strategic radiation hardened and low earth orbital space systems. The project remains on target and is meeting all milestones. We are pleased to see a growing trend to use commercial off-the-shelf products in LEO applications as the LEO market is expected to grow at a CAGR of 13%, significantly increasing from approximately $10 billion to $23 billion by 2029. We expect Everspin's MRAM products to support and be a part of this market leading to expanding adoption of our PERSYST X5 products. We have two other ongoing RradHard programs that utilize our STT-MRAM technology. The first program relates to an Ad-hoc 64 megabit STT-MRAM project. And the second is focused on building a strategic RadHard FPGA. We continue to recognize revenue from both programs and saw a meaningful sequential increase in revenue from our contract with QuickLogic. As a reminder, under this contract, we are providing our innovative AgILYST MRAM technology, logic design, and backend of line manufacturing services to advance the development and demonstration of strategic radiation hardened, high reliability FPGA technology. This initiative supports both current and future DOD strategic and space system requirements. We are pleased to share that we recognize family revenue from the initial production of order from our ongoing project with the leading provider of sensor devices to provide foundry services for their latest generation TMR sensor device on our MRAM line in our Chandler facility. We also recognize non-recurring engineering or NRE revenue for helping with the qualification. Turning to below the line items, last quarter we were awarded 14.6 million contract for the next two and a half years from a DOD contractor to develop a sustainable plan for our MRAM manufacturing facilities to provide continuous onshore MRAM capabilities to their aerospace and defense customers. During the fourth quarter, we recognized 2.1 million from this project in other income. Before I turn the ball over to Bill, I would like to provide an update on some of our recent awards that we believe will contribute to revenue in future quarters. As I mentioned earlier, we signed a contract with Purdue University and will be providing our state-of-the-art STT-MRAM technology optimized for fast switching and high read margins to support energy efficient AI solutions and will also deploy our manufacturing expertise to fabricate reliable STT-MRAM arrays. During the initial phase of the project, we have shared our design information with Purdue and have started running wafers to calibrate the performance of the current magnetic stack while they do process development for Phase 2 of the project, which is estimated to begin next year. We expect to recognize initial revenue from the project in the first quarter. Now I would like to take a few minutes to discuss Everspin's MRAM technology, our vision and where we believe our products are expected to impact the memory industry and adjacent markets. As we have discussed in the past, we believe STT-MRAM is the optimal candidate to replace or scale NOR flash devices at densities greater than 256 megabit. When designed to replace NOR flash devices, STT-MRAM provides a simpler architecture for system designers with 100x faster writes and 10x to 100x higher write endurance. Everspin has four megabit to 128 megabit STT-MRAM with an XPI interface in production for addressing the NOR flash market. We are in the process of designing a one gigabit STT-MRAM product with a goal of providing early samples in '25. There is a strong interest in these high density parts from the FPGA as well as the automotive industry given the trend of electrification of automotive vehicles. We are part of the consortiums mentioned in our previous calls that are being formed to address these market needs and in some cases at the forefront. Everspin also has extensive experience in tuning STT-MRAM technology to make the end device look like a SRAM or DRAM. For example, we have four megabit to 128 megabit SRAM-like parts in production offered as part of a PERSYST family. These parts have unlimited read-write endurance, retain data for greater than 10 years in extreme temperature ranges, and are used by our customers for data logging applications in industrial automation, IoT, and the casino gaming industry. We have been further tuning this technology to improve the read-write speeds down to less than 10 nanoseconds while trading off the data retention for 10 years to weeks to keep the read-write endurance. There is a strong interest for these features driven by Microcontroller and Edge AI applications. We expect the segment to grow significantly over the next few years as the major players started adopting STT-MRAM as discrete chips or as chiplets in a packaging solution. As you're aware, Everspin also has DRAM-like MRAM shipping into the storage industry. We have 256 megabit to one gigabit parts with DDR-like interfaces shipping into the data center market. As a next step, we are in the process of demonstrating Computer Express Link, or CXL, STT-MRAM. We are assembling 512 megabytes and one gigabyte small outline dual inline memory module, or SO-DIMMs and DIMM, using our existing one gigabit DDR4-like STT-MRAM for this demonstration, providing persistent memory functionality. CXL is an ideal interface for MRAM as it allows utilization of the full range of MRAM benefits whether directly attached or in shared architectures to enable resource sharing within a CXL network. Use cases include high performance, persistent scratchpad memory and write cache, high speed data logging and capture, coalescence buffer for data staging and accelerator memory, especially for offload accelerators, whether in HPC or Edge AI use cases. Turning to our outlook for 2025, we expect the year to be weighted more heavily towards the second half of 2025, due partially to our typical seasonality and as our Asian customers continue to work through their inventory. I will now turn it over to our CFO, Bill Cooper, who will take you through our fourth quarter financials and first quarter 2025 guidance. Bill?